PART |
Description |
Maker |
MGD623N |
IGBT(integrated FRD)
|
Sanken
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
AP05G120SW-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
|
Advanced Power Electronics Corp.
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
IXGR50N60B2D1 IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 68 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
ISL9V3036D3ST ISL9V3036S3ST |
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT 21 A, 350 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|